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2SD2170
Transistors
Medium Power Transistor (Motor, Relay drive) (90 +20 , 2A) -10
2SD2170
Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. External dimensions (Unit : mm)
4.0 1.0 2.5 0.5
1.5 0.4
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) Base (2) Collector (3) Emitter
1.5 0.4
ROHM : MPT3 EIAJ : SC-62
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 90 +20 -10 90 +20 -10 6 2 3 0.5 1 2 2 150 -55 to +150 Unit V V V A (DC) A (Pulse) W C C
Collector current Collector power dissipation Junction temperature Storage temperature
1 Single pulse Pw=10ms,Duty=1/2 2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces) 2SD2170 MPT3 1k to 10k DM T100 1000
Equivalent circuit
C
B R1 E : Emitter B : Base C : Collector
R1 R2
R2 E 3.5k 300
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob Min. 80 80 - - - 1000 - - Typ. - - - - - - 80 25 Max. 110 110 10 3 1.5 10000 - - Unit V V A mA V - MHz pF IC=50A IC=1mA VCB=70V VEB=5V IC/IB=1A/1mA VCE=2V , IC=1A VCE=5V , IE=-0.1A , f=30MHz VCB=10V , IE=0A , f=1MHz 1 1 2 Conditions
1 Measure using pulse current. 2 Transition frequency of the device.
0.4
1.5
Rev.A
1/2
2SD2170
Transistors
Electrical characteristic curves
2.0
COLLECTOR CURRENT : IC (A)
Ta=25C
5
COLLECTOR CURRENT : IC (A)
0.6mA 0.5mA 0.4mA
0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002
DC CURRENT GAIN : hFE
1.6
1.0mA 0.9mA 0.8mA 0.7mA
Ta=25C
VCE=2V
10000 5000 2000 1000 500 200 100 50 20
Ta=25C
VCE=4V 2V
2 1
1.2
0.8
IB=0.3mA
0.4
0
0.001
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
0.005
0.01 0.02 0.05 0.1
0.2 0.5
1
2
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Grounded emitter output characteristics
Fig.2 Grounded emitter propagation Fig.3 DC current gain vs. collector current characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta=25C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
5
200
Ta=25C f=1MHz IE=0A
10
s 1m ms 10 s m 10
100
1
2
IC/IB=1000
= Pw
IC (A)
1
50
0.1
D
500
C
0.5
20
0.01
0.2 0.1 0.01 0.02 0.05
10 5 0.1
0.1
0.2
0.5
1
2
5
0.5
1
2
5
10
20
50
Ta=25C Single Nonrepetitive Pulse 0.001 0.1 1
10
VCE (V)
100
1000
COLLECTOR CURRENT : IC (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.4 Collector-emitter saturation voltage vs. collector current
Fig.5 Collector output capacitance vs. collector-base voltage
Fig.6 Safe operating area
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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